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BCR512
NPN Silicon Digital Transistor * Built in bias resistor (R1= 4.7 k, R2 = 4.7 k) * Pb-free (RoHS compliant) package 1) * Qualified according AEC Q101
3 1
2
C 3
R1 R2
1 B
2 E
EHA07184
Type BCR512
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Input forward voltage Input reverse voltage Collector current Total power dissipationTS 79 C Junction temperature Storage temperature Thermal Resistance Parameter Junction - soldering point 2)
1Pb-containing 2For
Marking XFs
Pin Configuration 1=B 2=E
Symbol VCEO VCBO Vi(fwd) Vi(rev) IC Ptot Tj Tstg Symbol RthJS
3=C
Package SOT23
Value 50 50 30 10 500 330 150 mA mW C Unit V
-65 ... 150 Value 215 Unit K/W
package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance
1
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BCR512
Electrical Characteristics at TA = 25C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 50 V IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector-base cutoff current VCB = 50 V, IE = 0 Emitter-base cutoff current VEB = 10 V, IC = 0 DC current gainIC = 50 mA, VCE = 5 V Collector-emitter saturation voltage1) IC = 50 mA, IB = 2.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on voltage IC = 10 mA, VCE = 0.3 V Input resistor Resistor ratio R1 R1/R 2 3.2 0.9 4.7 1 6.2 1.1 k Vi(on) 1 2.2 Vi(off) 0.6 1.5 VCEsat 0.3 V h FE 60 I EBO 1.61 mA I CBO 100 nA V(BR)CBO 50 -
AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz
1Pulse
fT
-
100
-
MHz
test: t < 300s; D < 2%
2
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BCR512
DC current gain hFE = (IC) VCE = 5 V (common emitter configuration)
10 3
Collector-emitter saturation voltage VCEsat = (IC), IC/IB = 20
0.5
V
10 2
0.4
V CEsat
0.35 0.3 0.25 0.2
h FE
10
1
-40 C -25 C 25 C 85 C 125 C
10 0
-40 C -25 C 25 C 85 C 125 C
0.15 0.1 0.05
10 -1 -4 10
10
-3
10
-2
10
-1
A
10
0
0 -3 10
10
-2
10
-1
A
10
0
IC
IC
Input on Voltage Vi(on) = (IC ) VCE = 0.3V (common emitter configuration)
10 2
Input off voltage V i(off) = (IC) VCE = 5V (common emitter configuration)
10 1
V
Vi(off)
Vi(on)
10 1
-40 C -25 C 25 C 85 C 125 C
V
-40 C -25 C 25 C 85 C 125 C
10 0
10 0
10 -1 -4 10
10
-3
10
-2
10
-1
A
10
0
10 -1 -5 10
10
-4
10
-3
A
10
-2
IC
IC
3
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BCR512
Total power dissipation Ptot = (TS) Permissible Pulse Load RthJS = (t p)
400
mW
10 3
K/W
300
10 2
250
RthJS
10 1
P tot
200
150 10 0
100
50 10 -1 -6 10
0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0
0 0
20
40
60
80
100
120 C
150
10
-5
10
-4
10
-3
10
-2
s
10
0
TS
tp
Permissible Pulse Load Ptotmax/P totDC = (tp)
10 4
-
Ptotmax /PtotDC
10 3
10 2
D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 1
10 0 -6 10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
4
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Package SOT23
BCR512
Package Outline
0.15 MIN.
1 0.1 0.1 MAX.
1.3 0.1
2.9 0.1
3
B
2.4 0.15
10 MAX.
0.4 +0.1 -0.05
1)
1
2
10 MAX.
C 0.95 1.9
0.08...0.1
A
5
0...8
0.25 M B C
0.2
M
A
1) Lead width can be 0.6 max. in dambar area
Foot Print
0.8
0.9
0.8
1.2
Marking Layout (Example)
Manufacturer
EH s
Pin 1
0.9
1.3
2005, June Date code (YM)
BCW66 Type code
Standard Packing
Reel o180 mm = 3.000 Pieces/Reel Reel o330 mm = 10.000 Pieces/Reel
4 0.9
2.13 2.65
0.2
8
Pin 1
3.15
1.15
5
2007-07-23
BCR512
Edition 2006-02-01 Published by Infineon Technologies AG 81726 Munchen, Germany (c) Infineon Technologies AG 2007. All Rights Reserved.
Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics ("Beschaffenheitsgarantie"). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
6
2007-07-23

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